Plasma surface interactions (PSI) have a crucial influence on the performance and longevity of optical components in EUV lithography systems. A prevailing assumption suggests that excited electrons effectively neutralize plasma ions through Auger processes upon impact.
Consequently, Auger captures rates affect the kinetic energy of the ions and their capability of damaging the material. In this project, a simulation tool based on the so-called atom-in-jellium model is going to be developed to calculate Auger capture rates in a computationally efficient fashion.